features z high voltage and high current z excellent h fe linearity z low niose z complementary to c1815 marking: ba maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 125 t stg storage temperature -55-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -100u a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c = -0.1ma, i b =0 -50 v emitter-base breakdown voltage v(br) ebo i e = -100 u a, i c =0 -5 v collector cut-off current i cbo v cb =-50v , i e =0 -0.1 u a collector cut-off current i ceo v ce = -50v , i b =0 -0.1 u a emitter cut-off current i ebo v eb =- 5v, i c =0 -0.1 u a dc current gain h fe v ce =-6v, i c = -2ma 130 400 collector-emitter saturation voltage v ce (sat) i c =-100 ma, i b = -10ma -0.3 v base-emitter saturation voltage v be (sat) i c =-100 ma, i b = -10ma -1.1 v transition frequency f t v ce =-10v, i c = -1ma f=30mhz 80 mhz classification of h fe rank l h range 130-200 200-400 sot-23 1. base 2. emitter 3. collector A1015 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics A1015 2 date:2011/05 www.htsemi.com semiconductor jinyu
|
